BFR30LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – JFET Amplifiers(N-Channel)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET Amplifiers
N – Channel
3
GATE
2 SOURCE
1 DRAIN
Order this document
by BFR30LT1/D
BFR30LT1
BFR31LT1
3
1
2
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Source Voltage
Gate – Source Voltage
THERMAL CHARACTERISTICS
VDS
25
VGS
25
Characteristic
Total Device Dissipation(1)
TA = 25°C
Derate above 25°C
Symbol
Max
PD
225
1.8
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
R_qJA
556
PD
300
2.4
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
TJ, Tstg
417
– 55 to +150
BFR30LT1 = M1; BFR31LT1 = M2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Gate Reverse Current
Gate Source Cutoff Voltage
(VGS = 10 Vdc, VDS = 0)
(ID = 0.5 nAdc, VDS = 10 Vdc)
BFR30
BFR31
IGSS
—
VGS(OFF)
—
—
Gate Source Voltage
(ID = 1.0 mAdc, VDS = 10 Vdc)
(ID = 50 mAdc, VDS = 10 Vdc)
BFR30
BFR31
BFR30
BFR31
VGS
– 0.7
—
—
—
1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Unit
Vdc
Vdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
Unit
0.2
5.0
2.5
– 3.0
– 1.3
– 4.0
– 2.0
nAdc
Vdc
Vdc
Thermal Clad is a registered trademark of the Berquist Company.
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