BF959 Datasheet, PDF (1/4 Pages) Motorola, Inc – VHF Transistor(NPN)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
VHF Transistor
NPN Silicon
COLLECTOR
1
3
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
20
Vdc
30
Vdc
3.0
Vdc
100
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watt
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
°C/W
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCB = 20 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
20
V(BR)CBO
30
V(BR)EBO
3.0
ICBO
—
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc)
hFE
35
40
Collector – Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc)
VCE(sat)
—
Base – Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc)
VBE(sat)
—
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz)
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, Pf = 0, f = 10 MHz)
Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 Ω, f = 200 MHz)
fT
700
600
Cre
—
Nf
—
Order this document
by BF959/D
BF959
1
2
3
CASE 29–04, STYLE 21
TO–92 (TO–226AA)
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
100
nAdc
—
—
—
—
—
—
1.0
Vdc
—
1.0
Vdc
MHz
—
—
—
—
0.65
—
pF
3.0
—
dB
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996