BF844 Datasheet, PDF (1/6 Pages) Motorola, Inc – High Voltage Transistor(NPN)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Transistor
NPN Silicon
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by BF844/D
BF844
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
400
Vdc
450
Vdc
6.0
Vdc
300
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watt
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 400 Vdc, IE = 0)
Collector Cutoff Current
(VCE = 400 Vdc, VBE = 0)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO 400
V(BR)CES 450
V(BR)CBO 450
V(BR)EBO
6.0
ICBO
—
ICES
—
IEBO
—
Max
Unit
—
Vdc
—
Vdc
—
Vdc
—
Vdc
0.1
µAdc
500
nAdc
0.1
µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996