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BF721T1 Datasheet, PDF (1/4 Pages) Motorola, Inc – PNP SILICON TRANSISTOR SURFACE MOUNT | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BF721T1/D
PNP Silicon Transistor
COLLECTOR 2,4
BF721T1
Motorola Preferred Device
BASE
1
PNP SILICON
TRANSISTOR
SURFACE MOUNT
EMITTER 3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation up to
TA = 25°C(1)
Storage Temperature Range
Junction Temperature
DEVICE MARKING
DF
Symbol
VCEO
VCBO
VCER
VEBO
IC
PD
Tstg
TJ
Value
â 300
â300
â 300
â 5.0
â100
1.5
â 65 to +150
150
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
Watts
°C
°C
4
1
2
3
CASE 318E-04, STYLE 1
SOTâ223 (TO-261AA)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance from Junction to
RθJA
83.3
Ambient(1)
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = â1.0 mAdc, IB = 0)
V(BR)CEO
â 300
â
Vdc
Collector-Base Breakdown Voltage
(IC = â100 µAdc, IE = 0)
V(BR)CBO
â300
â
Vdc
Collector-Emitter Breakdown Voltage
(IC = â100 µAdc, RBE = 2.7 kâ¦)
V(BR)CER
â300
â
Vdc
Emitter-Base Breakdown Voltage
(IE = â10 µAdc, IC = 0)
V(BR)EBO
â 5.0
â
Vdc
Collector-Base Cutoff Current
(VCB = â 200 Vdc, IE = 0)
ICBO
â
â10
nAdc
CollectorâEmitter Cutoff Current
(VCE = â 250 Vdc, RBE = 2.7 kâ¦)
(VCE = â 200 Vdc, RBE = 2.7 kâ¦, TJ = 150°C)
ICER
â
â50
nAdc
â
â10
µAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
©MMoottoorroollaa, ISncm. 1a9l9lâ6Signal Transistors, FETs and Diodes Device Data
1
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