BF493S Datasheet, PDF (1/4 Pages) Motorola, Inc – High Voltage Transistor(PNP)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Transistor
PNP Silicon
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by BF493S/D
BF493S
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–350
–350
–6.0
–500
625
5.0
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage ⁽¹⁾
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –250 Vdc)
Emitter Cutoff Current
(VEB = –6.0 Vdc, IC = 0)
Collector Cutoff Current
(VCB = –250 Vdc, IE = 0, TA = 25°C)
(VCB = –250 Vdc, IE = 0, TA = 100°C)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
Max
Unit
V(BR)CEO –350
V(BR)CBO –350
V(BR)EBO –6.0
ICES
—
IEBO
—
ICBO
—
—
—
—
—
–10
0.1
–0.005
–1.0
Vdc
Vdc
Vdc
nAdc
mAdc
mAdc
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1