BF421 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Voltage Transistors(PNP)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Transistors
PNP Silicon
COLLECTOR
2
3
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol BF421
BF423
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–300
–250
–300
–250
–5.0
–500
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation
PD
1.5
Watts
@ TC = 25°C
12
mW/°C
Derate above 25°C
Operating and Storage Junction TJ, Tstg
– 55 to +150
°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
°C/W
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage ⁽¹⁾
(IC = –1.0 mAdc, IB = 0)
BF421
BF423
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
BF421
BF423
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
BF421
BF423
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
BF421
BF423
Emitter Cutoff Current
(VEB = –5.0 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
BF421
BF423
Order this document
by BF421/D
BF421
BF423
1
2
3
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
–300
–250
–300
–250
–5.0
–5.0
—
—
—
—
—
—
—
—
—
—
–0.01
—
–100
—
Vdc
Vdc
Vdc
mAdc
nAdc
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1