BF393 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Voltage Transistor(NPN)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Transistor
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
Order this document
by BF393/D
BF393
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
VCEO
300
Collector – Base Voltage
VCBO
300
Emitter – Base Voltage
VEBO
6.0
Collector Current — Continuous
IC
500
Total Device Dissipation @ TA = 25°C
PD
625
Derate above 25°C
5.0
Total Device Dissipation @ TC = 25°C
PD
1.5
Derate above 25°C
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to
R_qJA
200
Ambient
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB =0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Unit
°C/W
°C/W
Symbol
Min
V(BR)CEO
300
V(BR)CBO
300
V(BR)EBO
6.0
ICBO
—
IEBO
—
Max
Unit
Vdc
—
Vdc
—
Vdc
—
µAdc
0.1
µAdc
0.1
(Replaces BF392/D)
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1