BF392 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Voltage Transistors(NPN)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BF392/D
High Voltage Transistors
NPN Silicon
COLLECTOR
3
2
BASE
BF392
BF393
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol BF392 BF393 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
250
300
250
300
6.0
500
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB =0)
BF392
BF393
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
BF392
BF393
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
BF392
BF393
V(BR)EBO
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 6.0 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
BF392
BF393
BF392
BF393
ICBO
IEBO
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Max
Unit
Vdc
250
—
300
—
Vdc
250
—
300
—
Vdc
6.0
—
6.0
—
µAdc
—
0.1
—
0.1
µAdc
—
0.1
—
0.1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1