BF240 Datasheet, PDF (1/4 Pages) Motorola, Inc – AM/FM Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
AM/FM Transistor
NPN Silicon
Order this document
by BF240/D
BF240
COLLECTOR
1
3
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40
Vdc
40
Vdc
4.0
Vdc
25
mAdc
350
mW
2.8
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.0
Watt
8.0
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
357
°C/W
Thermal Resistance, Junction to Case
R_qJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0)
Collector Cutoff Current (VCB = 20 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
40
V(BR)CBO
40
V(BR)EBO 4.0
ICBO
—
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc)
Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
65
VBE(on)
0.65
Current–Gain — Bandwidth Product
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
—
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Cre
—
1
23
CASE 29–04, STYLE 21
TO–92 (TO–226AA)
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
100
nAdc
—
220
—
0.7
0.74
Vdc
600
—
MHz
0.28
0.34
pF
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996