BF224 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
RF Transistor
NPN Silicon
COLLECTOR
1
3
BASE
2
EMITTER
Order this document
by BF224/D
BF224
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
30
Vdc
45
Vdc
4.0
Vdc
50
mAdc
350
mW
2.8
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.0
Watts
8.0
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
357
°C/W
Thermal Resistance, Junction to Case
R_qJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
V(BR)CEO
30
V(BR)CBO
45
V(BR)EBO
4.0
ICBO
—
IEBO
—
1
2
3
CASE 29–04, STYLE 21
TO–92 (TO–226AA)
Typ
Max
Unit
Vdc
—
—
Vdc
—
—
Vdc
—
—
nAdc
—
100
nAdc
—
100
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1