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BD808 Datasheet, PDF (1/4 Pages) Motorola, Inc – Plastic High Power Silicon PNP Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD808/D
BD808
Plastic High Power Silicon
BD810*
PNP Transistor
*Motorola Preferred Device
10 AMPERE
. . . designed for use in high power audio amplifiers utilizing complementary or quasi
complementary circuits.
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà ⢠DC Current Gain â hFE = 30 (Min) @ IC = 2.0 Adc
⢠BD 808, 810 are complementary with BD 807, 890
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
Symbol
VCEO
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
VCBO
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Device Dissipation TC = 25_C
Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Temperature Range
VEBO
IC
IB
PD
TJ, Tstg
Type
BD808
BD810
BD808
BD810
Value
60
80
70
80
5.0
10
6.0
90
720
â 55 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/_C
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
Max
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Case
θJC
1.39
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Sustaining Voltage*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 0.1 Adc, IB = 0)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Cutoff Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (VCB = 70 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
BVCEO
ICBO
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Emitter Cutoff Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (VBE = 5.0 Vdc, IC = 0)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ DC Current Gain
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 2.0 A, VCE = 2.0 V)
(IC = 4.0 A, VCE = 2.0 V)
IEBO
hFE
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Saturation Voltage*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 3.0 Adc, IB = 0.3 Adc)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ BaseâEmitter On Voltage*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 4.0 Adc, VCE = 2.0 Vdc)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CurrentâGain Bandwidth Product
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà x x *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
VCE(sat)
VBE(on)
fT
Unit
_C/W
Type
BD808
BD810
BD808
BD810
POWER TRANSISTORS
PNP SILICON
60, 80 VOLTS
90 WATTS
CASE 221Aâ06
TOâ220AB
Min
Max
Unit
60
â
Vdc
80
â
mAdc
â
1.0
â
1.0
â
2.0
mAdc
30
â
15
â
â
1.1
Vdc
â
1.6
Vdc
1.5
â
MHz
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
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