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BD802 Datasheet, PDF (1/4 Pages) Motorola, Inc – Plastic High Power Silicon PNP Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD802/D
BD802
Plastic High Power Silicon
PNP Transistor
8 AMPERE
POWER TRANSISTORS
. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi
PNP SILICON
complementary circuits.
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà ⢠DC Current Gain â hFE = 40 (Min) @ IC = 1.0 Adc
⢠BD802 is complementary with BD 795, 797, 799, 801
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Device Dissipation TC = 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, Tstg
Value
100
100
5.0
8.0
3.0
65
522
â 55 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/_C
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
Max
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Case
θJC
1.92
_C/W
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
Min
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Sustaining Voltage*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 0.05 Adc, IB = 0)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Emitter Cutoff Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (VBE = 5.0 Vdc, IC = 0)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ DC Current Gain
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 1.0 A, VCE = 2.0 V)
(IC = 3.0 A, VCE = 2.0 V)
BVCEO
100
ICBO
â
IEBO
â
hFE
30
15
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Saturation Voltage*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 3.0 Adc, IB = 0.3 Adc)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ BaseâEmitter On Voltage*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 3.0 Adc, VCE = 2.0 Vdc)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CurrentâGain â Bandwidth Product
(IC = 0.25 Adc, VCE = 10 Vdc,
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ f = MHz)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà x x *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0.
VCE(sat)
â
VBE(on)
â
fT
3.0
100 VOLTS
65 WATTS
CASE 221Aâ06
TOâ220AB
Max
Unit
â
Vdc
0.1
mAdc
1.0
mAdc
â
â
1.0
Vdc
1.6
Vdc
â
MHz
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
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