BD801 Datasheet, PDF (1/4 Pages) Motorola, Inc – Plastic High Power Silicon NPN Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD801/D
BD801
Plastic High Power Silicon NPN
Transistor
8 AMPERE
POWER TRANSISTORS
. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi
NPN SILICON
complementary circuits.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc
• BD801 is complementary with BD 798, 800, 802
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, Tstg
Value
100
100
5.0
8.0
3.0
65
522
– 55 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
θ_JC
1.92
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Sustaining Voltage*}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(IC = 0.1 Adc, IB = 0)}
(IC = 0.05 Adc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(VCB = 100 Vdc, IE = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(VBE = 5.0 Vdc, IC = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{DC Current Gain}
(IC = 1.0 A, VCE = 2.0 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 3.0 A, VCE = 2.0 V)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Saturation Voltage*}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(IC = 3.0 Adc, IB = 0.3 Adc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Base–Emitter On Voltage*}
(IC = 3.0 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Current–Gain Bandwidth Product}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 0.25 Adc, VCE = 10 Vdc,}
f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{v v *Pulse Test: Pulse Width 300µs. Duty Cycle 2.0%.}
BVCEO
100
ICBO
0.1
IEBO
—
hFE
30
15
VCE(sat)
—
VBE(on)
—
fT
3.0
100 VOLTS
65 WATTS
CASE 221A–06
TO–220AB
Max
Unit
—
Vdc
—
mAdc
1.0
mAdc
—
—
1.0
Vdc
1.6
Vdc
—
MHz
REV 7
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
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