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BD789 Datasheet, PDF (1/6 Pages) Motorola, Inc – Complementary Plastic Silicon Power Transistors | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD789/D
Complementary Plastic Silicon
Power Transistors
. . . designed for low power audio amplifier and lowâcurrent, high speed switching
applications.
⢠High CollectorâEmitter Sustaining Voltage â
VCEO(sus) = 80 Vdc (Min) â BD789, BD790
VCEO(sus) = 100 Vdc (Min) â BD791, BD792
⢠High DC Current Gain @ IC = 200 mAdc
hFE = 40â250
⢠Low CollectorâEmitter Saturation Voltage â
VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc
⢠High Current Gain â Bandwidth Product â
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ fT = 40 MHz (Min) @ IC = 100 mAdc)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ *MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ â Peak
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TC = 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCB
VEBO
IC
IB
PD
TJ,Tstg
BD789
BD790
BD791
BD792
80
100
80
100
6.0
4.0
8.0
1.0
15
0.12
â 65 to + 150
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
Max
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Case
RθJC
8.34
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
16
1.6
12
1.2
8.0
0.8
4.0
0.4
0
0
20
40
60
80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
BDNP7N89
BD791*
PNP
BD790
BD792*
*Motorola Preferred Device
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
15 WATTS
CASE 77â08
TOâ225AA TYPE
1
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