BD787 Datasheet, PDF (1/6 Pages) Motorola, Inc – Complementary Plastic Silicon Power Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Plastic Silicon
Power Transistors
. . . designed for lower power audio amplifier and low current, high–speed switching
applications.
• Low Collector–Emitter Sustaining Voltage —
VCEO(sus) 60 Vdc (Min) — BD787, BD788
• High Current–Gain — Bandwidth Product —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ fT = 50 MHz (Min) @ IC = 100 mAdc
• Collector–Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continous
— Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25°C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate Above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, Tstg
BD787
BD788
60
80
6.0
4.0
8.0
1.0
15
0.12
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
W/_C
_C
Symbol
R_θJC
Max
Unit
8.34
_C/W
Order this document
by BD787/D
BD^NP7^N87
BD^PN7^P88
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 VOLTS
15 WATTS
CASE 77–08
TO–225AA TYPE
16
1.6
12
1.2
8.0
0.8
4.0
0.4
0
20 40
0
60
80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
REV 7
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
1