BD777 Datasheet, PDF (1/4 Pages) Motorola, Inc – Plastic Darlington Complementary Silicon Power Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BD777/D
Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for general purpose amplifier and high–speed switching applications.
• High DC Current Gain
hFE = 1400 (Typ) @ IC = 2.0 Adc
• Collector–Emitter Sustaining Voltage — @ 10 mAdc
VCEO(sus) = 45 Vdc (Min) — BD776
VCEO(sus) = 60 Vdc (Min) — BD777, 778
VCEO(sus) = 80 Vdc (Min) — BD780
• Reverse Voltage Protection Diode
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{• Monolithic Construction with Built–in Base–Emitter output Resistor}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current —}
Continuous Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TC = 25_C – Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
Temperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
BD777
BD776 BD778 BD780
45
60
80
45
60
80
5.0
4.0
6.0
100
15
0.12
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Characteristics}
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Thermal Resistance, Junction to Case}
R_θJC
8.34
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Thermal Resistance, Junction to Ambient}
R_θJA
83.3
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_C
_C
Unit
_C/W
_C/W
16
1.6
NPN
BD777
PNP
BD776
BD778
BD780 ^*
*Motorola Preferred Device
DARLINGTON
4–AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
45, 60, 80 VOLTS
15 WATTS
CASE 77–08
TO–225AA TYPE
12
1.2
8.0
0.8
4.0
0.4
0
20 40
0
60
80
100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
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