BD676 Datasheet, PDF (1/4 Pages) Motorola, Inc – Plastic Medium-Power Silicon PNP Darlingtons

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD676/D
Plastic Medium-Power
Silicon PNP Darlingtons
. . . for use as output devices in complementary general–purpose amplifier applica-
tions.
• High DC Current Gain —
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
• Monolithic Construction
• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A,
677, 677A, 679, 679A, 681
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{• BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATING}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
BD676 BD678 BD680
Symbol BD676A BD678A BD680A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
VCEO
45
60
80
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
VCB
45
VEB
60
80
5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current}
IC
4.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
IB
0.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation}
PD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{@ TC = 25 _C}
40
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25 _C
0.32
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction TJ, Tstg
Temperating Range
– 55 to + 150
BD682
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Thermal Resistance, Junction to Case}
Symbol
θ_JC
Max
Unit
3.13
_C/W
50
45
40
35
30
25
20
15
10
5.0
0
15 30 45 60 75 90 105 120 135 150 165
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
BD676
BD676A
BD678
BD678A
BD680
BD680A
BD682
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLTS
40 WATTS
CASE 77–08
TO–225AA TYPE
REV 7
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
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