BD243B Datasheet, PDF (1/6 Pages) Motorola, Inc – Complementary Silicon Plastic Power Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BD243B/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
• Collector – Emitter Saturation Voltage —
VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
• Collector Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min) — BD243B, BD244B
VCEO(sus) = 100 Vdc (Min) — BD243C, BD244C
• High Current Gain Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{fT = 3.0 MHz (Min) @ IC = 500 mAdc}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{• Compact TO–220 AB Package}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation
@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
BD243B BD243C
BD244B BD244C
80
100
80
100
5.0
6
10
2.0
65
0.52
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Symbol
R_θJC
Max
Unit
1.92
_C/W
80
BD^N2^P4^N3B
BD243C*
PNP
BD244B
BD244C*
*Motorola Preferred Device
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80 – 100 VOLTS
65 WATTS
CASE 221A–06
TO–220AB
60
40
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
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