BCW69LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – General Purpose Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BCW69LT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
VCEO
VEBO
IC
–45
–5.0
–100
BCW69LT1 = H1; BCW70LT1 = H2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board ⁽¹⁾
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = –100 µAdc, VEB = 0)
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0)
Collector Cutoff Current
(VCB = –20 Vdc, IE = 0)
(VCB = –20 Vdc, IE = 0, TA = 100°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Unit
Vdc
Vdc
mAdc
Symbol
PD
R_θJA
PD
R_θJA
TJ, Tstg
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
BCW69LT1
BCW70LT1
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min
Max
Unit
–45
—
Vdc
–50
—
Vdc
–5.0
—
Vdc
—
–100
nAdc
—
–10
µAdc
Thermal Clad is a trademark of the Bergquist Company
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1