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BCW68GLT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – General Purpose Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW68GLT1/D
General Purpose Transistor
PNP Silicon
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
DEVICE MARKING
VCEO
VCBO
VEBO
IC
â45
â60
â5.0
â800
Vdc
Vdc
Vdc
mAdc
BCW68GLT1 = DH
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
RθJA
PD
Thermal Resistance, Junction to Ambient
RθJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (IC = â10 mAdc, IB = 0)
CollectorâEmitter Breakdown Voltage (IC = â10 µAdc, VEB = 0)
EmitterâBase Breakdown Voltage (IE = â10 µAdc, IC = 0)
Collector Cutoff Current
(VCE= â45 Vdc, IE = 0)
(VCE= â45 Vdc, IB = 0, TA = 150°C)
Emitter Cutoff Current (VEB = â4.0 Vdc, IC = 0)
V(BR)CEO
â45
V(BR)CES
â60
V(BR)EBO
â5.0
ICES
â
â
IEBO
â
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
BCW68GLT1
3
1
2
CASE 318 â 08, STYLE 6
SOTâ 23 (TO â 236AB)
Max
225
1.8
556
300
2.4
417
â 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Typ
Max
Unit
â
â
Vdc
â
â
Vdc
â
â
Vdc
â
â20
nAdc
â
â10
µAdc
â
â20
nAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
SmallâSignal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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