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BCW65ALT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – General Purpose Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW65ALT1/D
General Purpose Transistor
NPN Silicon
COLLECTOR
3
BCW65ALT1
1
BASE
MAXIMUM RATINGS
Rating
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BCW65ALT1 = EA
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
Value
32
60
5.0
800
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
â 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
32
Collector â Emitter Breakdown Voltage
(IC = 10 mAdc, VEB = 0)
V(BR)CES
60
Emitter â Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Collector Cutoff Current
(VCE = 32 Vdc, IE = 0)
(VCE = 32 Vdc, IE = 0, TA = 150°C)
ICES
â
â
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. FRâ 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
IEBO
â
3
1
2
CASE 318 â 08, STYLE 6
SOTâ 23 (TO â 236AB)
Typ
Max
Unit
â
â
Vdc
â
â
Vdc
â
â
Vdc
â
20
nAdc
â
20
µAdc
â
20
nAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
SmallâSignal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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