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BCW61BLT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – General Purpose Transistors | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW61BLT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
BCW61BLT1
BCW61CLT1
BCW61DLT1
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
Total Device Dissipation FRâ 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD
Value
â32
â32
â5.0
â100
Max
225
1.8
556
300
2.4
417
â 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage
(IC = â2.0 mAdc, IB = 0)
Emitter â Base Breakdown Voltage
(IE = â1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = â32 Vdc)
(VCE = â32 Vdc, TA = 150°C)
1. FRâ 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)EBO
ICES
3
1
2
CASE 318 â 08, STYLE 6
SOTâ 23 (TO â 236AB)
Min
Max
Unit
â32
â
Vdc
â5.0
â
Vdc
â
â20
nAdc
â
â20
µAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
SmallâSignal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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