BCW29LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – General Purpose Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW29LT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
BCW29LT1
BCW30LT1
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
VCEO
–32
Vdc
VCBO
–32
Vdc
Emitter–Base Voltage
Collector Current – Continuous
THERMAL CHARACTERISTICS
VEBO
IC
–5.0
–100
Vdc
mAdc
Characteristic
Total Device Dissipation FR-5 Board ⁽¹⁾
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ TA = 25°C
Derate above 25°C
R_θJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R_θJA
TJ, Tstg
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –2.0 mAdc, IE = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage
(IC = –100 µAdc, VEB = 0)
V(BR)CES
Collector–Base Breakdown Voltage
(IC = –10 µAdc, IC = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = –10 µAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –32 Vdc, IE = 0)
(VCB = –32 Vdc, IE = 0, TA = 100°C)
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
ICBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Min
Max
Unit
–32
—
Vdc
–32
—
Vdc
–32
—
Vdc
–5.0
—
Vdc
—
–100
nAdc
—
–10
µAdc
Thermal Clad is a trademark of the Bergquist Company
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1