BCP56T1 Datasheet, PDF (1/6 Pages) Motorola, Inc – MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCP56T1/D
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in audio amplifier
applications. The device is housed in the SOT-223 package, which is designed for
medium power surface mount applications.
• High Current: 1.0 Amp
• The SOT-223 package can be soldered using wave or reflow. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
• Available in 12 mm Tape and Reel
Use BCP56T1 to order the 7 inch/1000 unit reel
Use BCP56T3 to order the 13 inch/4000 unit reel
COLLECTOR 2,4
• PNP Complement is BCP53T1
BASE
1
EMITTER 3
BCP56T1
SERIES
Motorola Preferred Device
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
80
Vdc
100
Vdc
5
Vdc
1
Adc
1.5
Watts
12
mW/°C
Operating and Storage Temperature Range
DEVICE MARKING
TJ, Tstg
– 65 to 150
°C
BCP56T1 = BH
BCP56-10T1 = BK
BCP56-16T1 = BL
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
Junction-to-Ambient (surface mounted)
R_θJA
83.3
°C/W
Maximum Temperature for Soldering Purposes
Time in Solder Bath
TL
260
°C
10
Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
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