BCP53T1 Datasheet, PDF (1/4 Pages) Motorola, Inc – MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCP53T1/D
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in audio amplifier
applications. The device is housed in the SOT-223 package which is designed for
medium power surface mount applications.
• High Current: 1.5 Amps
• NPN Complement is BCP56
• The SOT-223 Package can be soldered using wave or reflow. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
• Available in 12 mm Tape and Reel
Use BCP53T1 to order the 7 inch/1000 unit reel.
Use BCP53T3 to order the 13 inch/4000 unit reel.
COLLECTOR 2,4
BASE
1
EMITTER 3
BCP53T1
Motorola Preferred Device
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
– 80
–100
– 5.0
1.5
1.5
12
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Operating and Storage Temperature Range
DEVICE MARKING
TJ, Tstg
– 65 to 150
°C
AH
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance — Junction-to-Ambient (surface mounted)
R_θJA
83.3
Lead Temperature for Soldering, 0.0625″ from case
Time in Solder Bath
TL
260
10
Unit
°C/W
°C
Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoottoorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
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