BC846AWT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – CASE 419-02, STYLE 3 SOT-323/SC-70

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC846AWT1/D
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1
BASE
COLLECTOR
3
BC846AWT1,BWT1
BC847AWT1,BWT1,
CWT1
BC848AWT1,BWT1,
CWT1
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol BC846 BC847 BC848 Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCBO
80
50
30
V
VEBO
6.0
6.0
5.0
V
IC
100
100
100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
PD
150
mW
TA = 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
DEVICE MARKING
R_qJA
PD
TJ, Tstg
833
2.4
– 55 to +150
°C/W
mW/°C
°C
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
Collector – Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
BC846 Series
BC847 Series
BC848 Series
Collector – Base Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
Emitter – Base Breakdown Voltage
(IE = 1.0 mA)
BC846 Series
BC847 Series
BC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
3
1
2
CASE 419–02, STYLE 3
SOT–323/SC–70
Min
Typ
Max
Unit
65
—
—
V
45
—
—
30
—
—
80
—
—
V
50
—
—
30
—
—
80
—
—
V
50
—
—
30
—
—
6.0
—
—
V
6.0
—
—
5.0
—
—
—
—
15
nA
—
—
5.0
µA
Thermal Clad is a trademark of the Bergquist Company.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1