BC846ALT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC846ALT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
BC847 BC848
Symbol BC846 BC850 BC849 Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
VCBO
80
50
30
V
Emitter – Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current — Continuous
IC
100
100
100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
PD
TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
R_qJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CEO
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 µA, VEB = 0)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CES
Collector – Base Breakdown Voltage
(IC = 10 mA)
BC846A,B
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 1.0 mA)
BC846A,B
BC847A,B,C
V(BR)EBO
BC848A,B,C, BC849A,B,C, BC850A,B,C
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
ICBO
BC846ALT1,BLT1
BC847ALT1,
BLT1,CLT1 thru
BC850ALT1,BLT1,
CLT1
BC846, BC847 and BC848 are
Motorola Preferred Devices
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min
Typ
Max
Unit
65
—
—
V
45
—
—
30
—
—
80
—
—
V
50
—
—
30
—
—
80
—
—
V
50
—
—
30
—
—
6.0
—
—
V
6.0
—
—
5.0
—
—
—
—
15
nA
—
—
5.0
µA
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1