BC81716LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC817–16LT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
2
BASE
BC817-16LT1
BC817-25LT1
BC817-40LT1
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
45
VCBO
50
VEBO
5.0
IC
500
Characteristic
Symbol
Max
Total Device Dissipation FR– 5 Board, (1)
PD
TA = 25°C
225
Derate above 25°C
1.8
Thermal Resistance, Junction to Ambient
R_qJA
556
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
PD
300
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
TJ, Tstg
417
– 55 to +150
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C
1
EMITTER
Unit
V
V
V
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA)
V(BR)CEO 45
—
—
V
Collector – Emitter Breakdown Voltage
(VEB = 0, IC = –10 µA)
V(BR)CES
50
—
—
V
Emitter – Base Breakdown Voltage
(IE = –1.0 mA)
V(BR)EBO 5.0
—
—
V
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ICBO
—
—
100
nA
—
—
5.0
µA
Thermal Clad is a registered trademark of the Bergquist Company.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996