BC80716LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – General Purpose Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC807–16LT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
2
BASE
BC807-16LT1
BC807-25LT1
BC807-40LT1
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
–45
–50
–5.0
–500
Characteristic
Symbol
Max
Total Device Dissipation FR– 5 Board, (1)
PD
TA = 25°C
225
Derate above 25°C
1.8
Thermal Resistance, Junction to Ambient
R_qJA
556
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
PD
300
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
TJ, Tstg
417
– 55 to +150
BC807–16LT1 = 5A; BC807–25LT1 = 5B; BC807–40LT1 = 5C
1
EMITTER
Unit
V
V
V
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA)
V(BR)CEO –45
—
—
V
Collector – Emitter Breakdown Voltage
(VEB = 0, IC = –10 µA)
V(BR)CES –50
—
—
V
Emitter – Base Breakdown Voltage
(IE = –1.0 mA)
V(BR)EBO –5.0
—
—
V
Collector Cutoff Current
(VCB = –20 V)
(VCB = –20 V, TJ = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ICBO
—
—
–100
nA
—
—
–5.0
µA
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996