BC635 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Current Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Current Transistors
NPN Silicon
COLLECTOR
2
3
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 635 637 639 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
45 60 80 Vdc
45 60 80 Vdc
5.0
Vdc
0.5
Adc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watt
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient R_qJA
200
°C/W
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
BC635
BC637
BC639
V(BR)CEO
45
60
80
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
BC635
BC637
BC639
V(BR)CBO
45
60
80
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125°C)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
V(BR)EBO
5.0
ICBO
—
—
Order this document
by BC635/D
BC635
BC637
BC639
1
2
3
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
Typ
Max
Unit
Vdc
—
—
—
—
—
—
Vdc
—
—
—
—
—
—
—
—
Vdc
—
100
nAdc
—
10
µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996