BC549B Datasheet, PDF (1/4 Pages) Motorola, Inc – Low Noise Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC549B/D
Low Noise Transistors
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol BC549 BC550 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
30
45
30
50
5.0
100
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watt
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient R_qJA
200
°C/W
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
BC549B,C
BC550B,C
V(BR)CEO
30
45
Collector – Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
BC549B,C
BC550B,C
V(BR)CBO
30
50
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 30 V, IE = 0, TA = +125°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
V(BR)EBO
5.0
ICBO
—
—
IEBO
—
BC549B,C
BC550B,C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ
Max
Unit
Vdc
—
—
—
—
Vdc
—
—
—
—
—
—
Vdc
—
15
nAdc
—
5.0
µAdc
—
15
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996