BC450 Datasheet, PDF (1/6 Pages) Motorola, Inc – High Voltage Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC450/D
High Voltage Transistors
PNP Silicon
COLLECTOR
1
BC450,A
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–100
–100
–5.0
–300
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
Watt
Derate above 25°C
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
°C/W
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 mA, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –80 Vdc, IE = 0)
ON CHARACTERISTICS*
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
DC Current Gain
hFE
(IC = –2.0 mA, VCE = –5.0 V)
BC450
BC450A
(IC = –10 mA, VCE = –5.0 V)
BC450
BC450A
(IC = –100 mA, VCE = –5.0 V)
BC450
BC450A
v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Min
–100
–100
–5.0
—
50
120
50
100
50
60
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
–100
nAdc
—
—
460
—
220
—
—
—
—
—
—
—
—
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996