BC372 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Voltage Darlington Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage
Darlington Transistors
NPN Silicon
Order this document
by BC372/D
BC372
BC373
COLLECTOR 3
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol BC372 BC373 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCES
VCBO
VEBO
IC
PD
100
80
100
80
12
1.0
625
5.0
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watt
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 100 mAdc, IB = 0)
BC372
BC373
V(BR)CES
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
BC372
BC373
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
BC372
BC373
Emitter Cutoff Current
(VEB = 10 V, IC = 0)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
V(BR)EBO
ICBO
IEBO
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Typ
Max
Unit
100
—
80
—
100
—
80
—
12
—
Vdc
—
—
Vdc
—
—
—
Vdc
nAdc
—
—
100
—
—
100
—
—
100
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996