BC368 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
COLLECTOR
2
COLLECTOR
2
3
BASE
NPN
1
EMITTER
3
BASE
PNP
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCES
VEBO
IC
PD
20
Vdc
25
Vdc
5.0
Vdc
1.0
Adc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watt
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
°C/W
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 µA, IE = 0 )
Emitter – Base Breakdown Voltage
(IE = 100 µA, IC = 0)
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ = 150°C)
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
(VCE = 1.0 V, IC = 0.5 A)
(VCE = 1.0 V, IC = 1.0 A)
Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz)
Collector–Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)
Base–Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V)
hFE
fT
VCE(sat)
VBE(on)
Order this document
by BC368/D
NPN
BC368
PNP
BC369
Voltage and current are negative
for PNP transistors
1
2
3
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
Min
Typ
Max
Unit
20
—
—
Vdc
25
—
—
Vdc
5.0
—
—
Vdc
—
—
10
µAdc
—
—
1.0
mAdc
—
—
10
µAdc
—
50
—
—
85
—
375
60
—
—
65
—
—
MHz
—
—
0.5
V
—
—
1.0
V
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1