BC327 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors(PNP)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC327/D
Amplifier Transistors
PNP Silicon
COLLECTOR
1
BC327,-16,-25
BC328,-16,-25
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol BC327 BC328 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–45
–25
–50
–30
–5.0
–800
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watt
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient R_qJA
200
°C/W
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA, IB = 0)
BC327
BC328
V(BR)CEO
–45
–25
Collector – Emitter Breakdown Voltage
(IC = –100 µA, IE = 0)
BC327
BC328
V(BR)CES
–50
–30
Emitter – Base Breakdown Voltage
(IE = –10 mA, IC = 0)
Collector Cutoff Current
(VCB = –30 V, IE = 0)
(VCB = –20 V, IE = 0)
Collector Cutoff Current
(VCE = –45 V, VBE = 0)
(VCE = –25 V, VBE = 0)
Emitter Cutoff Current
(VEB = –4.0 V, IC = 0)
BC327
BC328
BC327
BC328
V(BR)EBO
–5.0
ICBO
—
—
ICES
—
—
IEBO
—
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ
Max
Unit
Vdc
—
—
—
—
Vdc
—
—
—
—
—
—
Vdc
nAdc
—
–100
—
–100
nAdc
—
–100
—
–100
—
–100
nAdc
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1