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BC307 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors(PNP) | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC307/D
Amplifier Transistors
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 307 308C 309 Unit
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
â45 â25 â25 Vdc
â50 â30 â30 Vdc
â5.0
Vdc
â100
mAdc
350
mW
2.8
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.0
Watts
8.0
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
â 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
357
°C/W
Thermal Resistance, Junction to Case
RqJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage
(IC = â2.0 mAdc, IB = 0)
BC307
BC308C
BC309B
V(BR)CEO
â45
â25
â25
Emitter â Base Breakdown Voltage
(IE = â100 mAdc, IC = 0)
BC307
BC308C
BC309B
V(BR)EBO
â5.0
â5.0
â5.0
CollectorâEmitter Leakage Current
(VCES = â50 V, VBE = 0)
(VCES = â30 V, VBE = 0)
BC307
BC308C
BC309B
ICES
â
â
â
(VCES = â50 V, VBE = 0) TA = 125°C
BC307
â
(VCES = â30 V, VBE = 0) TA = 125°C
BC308C
â
BC309B
â
BC307,B,C
BC308C
BC309B
1
2
3
CASE 29â04, STYLE 17
TOâ92 (TOâ226AA)
Typ
Max
Unit
â
â
Vdc
â
â
â
â
â
â
Vdc
â
â
â
â
â0.2
â15
nAdc
â0.2
â15
â0.2
â15
â0.2
â4.0
µA
â0.2
â4.0
â0.2
â4.0
Motorola SmallâSignal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996
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