BC237 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC237/D
Amplifier Transistors
NPN Silicon
COLLECTOR
1
BC237,A,B,C
BC238B,C
BC239,C
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 237 238 239 Unit
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCES
VEBO
IC
PD
45 25 25
50 30 30
6.0 5.0 5.0
100
350
2.8
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.0
Watts
8.0
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient R_qJA
357
°C/W
Thermal Resistance, Junction to Case
R_qJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
BC237
BC238
BC239
V(BR)CEO
45
25
25
Emitter – Base Breakdown Voltage
(IE = 100 mA, IC = 0)
BC237
BC238
BC239
V(BR)EBO
6.0
5.0
5.0
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
BC238
BC239
ICES
—
—
(VCE = 50 V, VBE = 0)
BC237
—
(VCE = 30 V, VBE = 0) TA = 125°C
BC238
—
BC239
—
(VCE = 50 V, VBE = 0) TA = 125°C
BC237
—
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ
Max
Unit
—
—
V
—
—
—
—
—
—
V
—
—
—
—
0.2
15
nA
0.2
15
0.2
15
0.2
4.0
µA
0.2
4.0
0.2
4.0
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996