BC212 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amlifier Transistors (PNP)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC212/D
Amplifier Transistors
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 212 213 214 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–50 –30 –30
–60 –45 –45
–5.0
–100
350
2.8
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.0
Watts
8.0
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient R_qJA
357
°C/W
Thermal Resistance, Junction to Case
R_qJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC212
BC213
BC214
V(BR)CEO
–50
–30
–30
Collector – Base Breakdown Voltage
(IC = –10 mA, IE = 0)
BC212
BC213
BC214
V(BR)CBO
–60
–45
–45
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
BC212
BC213
BC214
V(BR)EBO
–5
–5
–5
Collector–Emitter Leakage Current
(VCB = –30 V)
BC212
BC213
BC214
ICBO
—
—
—
Emitter–Base Leakage Current
(VEB = –4.0 V, IC = 0)
BC212
BC213
BC214
IEBO
—
—
—
BC212,B
BC213
BC214
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ
Max
Unit
—
—
Vdc
—
—
—
—
—
—
Vdc
—
—
—
—
—
—
Vdc
—
—
—
—
—
–15
nAdc
—
–15
—
–15
—
–15
nAdc
—
–15
—
–15
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996