BC182 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors(NPN)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC182/D
Amplifier Transistors
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 182 183 184 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
50 30 30
60 45 45
6.0
100
350
2.8
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.0
Watts
8.0
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient R_qJA
357
°C/W
Thermal Resistance, Junction to Case
R_qJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
BC182
BC183
BC184
V(BR)CEO
50
30
30
Collector – Base Breakdown Voltage
(IC = 10 mA, IE = 0)
BC182
BC183
BC184
V(BR)CBO
60
45
45
Emitter – Base Breakdown Voltage
(IE = 100 mA, IC = 0)
Collector Cutoff Current
(VCB = 50 V, VBE = 0)
(VCB = 30 V, VBE = 0)
BC182
BC183
BC184
V(BR)EBO
6.0
ICBO
—
—
—
Emitter–Base Leakage Current
(VEB = 4.0 V, IC = 0)
IEBO
—
BC182,A,B
BC183
BC184
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ
Max
Unit
V
—
—
—
—
—
—
V
—
—
—
—
—
—
—
—
V
nA
0.2
15
0.2
15
0.2
15
—
15
nA
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996