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BAV99LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – Dual Series Switching Diode
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual Series Switching Diode
Order this document
by BAV99LT1/D
BAV99LT1
Motorola Preferred Device
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current(1)
(averaged over any 20 ms period)
VR
IF
IFM(surge)
VRRM
IF(AV)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 A
IFRM
IFSM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board,(1) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BAV99LT1 = A7
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
3
1
2
CASE 318 – 08, STYLE 11
SOT– 23 (TO – 236AB)
ANODE
1
CATHODE
2
3
CATHODE/ANODE
Max
225
1.8
556
300
2.4
417
– 65 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa, SInmc. 1a9ll9–6Signal Transistors, FETs and Diodes Device Data
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