BAV70WT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – CASE 419-02, STYLE 5 SC-70/SOT-323

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BAV70WT1/D
Dual Switching Diode
3
CATHODE
ANODE
1
2
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Reverse Voltage
Forward Current
VR
70
IF
200
Peak Forward Surge Current
THERMAL CHARACTERISTICS
IFM(surge)
500
Characteristic
Symbol
Max
Total Device Dissipation FR– 5 Board(1)
PD
200
TA = 25°C
Derate above 25°C
1.6
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25°C
Derate above 25°C
R_qJA
PD
0.625
300
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
TJ, Tstg
417
– 55 to +150
A4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 50 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100 Ω, IR(REC) = 1.0 mAdc) (Figure 1)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns) (Figure 2)
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)
IR1
IR2
CD
VF
trr
VRF
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
BAV70WT1
Motorola Preferred Device
3
1
2
CASE 419–02, STYLE 5
SC–70/SOT–323
Min
Max
Unit
70
—
Vdc
—
5.0
µAdc
—
100
nAdc
—
1.5
pF
mVdc
—
715
—
855
—
1000
—
1250
—
6.0
ns
—
1.75
V
1