BAS70LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 318 08, STYLE 8 SOT 23 (TO 236AB)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.75 Volts (Typ) @ IF = 10 mAdc
3
CATHODE
1
ANODE
Order this document
by BAS70LT1/D
BAS70LT1
Motorola Preferred Device
70 VOLTS
SCHOTTKY BARRIER DIODES
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1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating
Symbol
Reverse Voltage
VR
Forward Power Dissipation
PF
@ TA = 25°C
Derate above 25°C
Operating Junction and Storage Temperature Range
DEVICE MARKING
TJ, Tstg
BAS70LT1 = BE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 0 V, f = 1.0 MHz)
Reverse Leakage (VR = 50 V)
(VR = 70 V)
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 15 mAdc)
Value
70
225
1.8
– 55 to +150
Symbol
Min
Max
V(BR)R
70
—
CT
—
2.0
IR
—
0.1
—
10
VF
—
410
VF
—
750
VF
—
1.0
Unit
Volts
mW
mW/°C
°C
Unit
Volts
pF
µAdc
mVdc
mVdc
Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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© Motorola, Inc. 1997