BAS40LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 318-08, STYLE 8 SOT-23 TO-236AB

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
3
CATHODE
1
ANODE
Order this document
by BAS40LT1/D
BAS40LT1
Motorola Preferred Device
40 VOLTS
SCHOTTKY BARRIER DIODES
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
40
Volts
PF
225
mW
1.8
mW/°C
Operating Junction and Storage Temperature Range TJ, Tstg – 55 to +150 °C
DEVICE MARKING
BAS40LT1 = B1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 µA)
V(BR)R
Total Capacitance
CT
(VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage
IR
(VR = 25 V)
Forward Voltage
VF
(IF = 0.1 mAdc)
Forward Voltage
VF
(IF = 30 mAdc)
Forward Voltage
VF
(IF = 100 mAdc)
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
Min
Max
Unit
40
—
Volts
—
5.0
pF
—
1.0
µAdc
—
380
mVdc
—
500
mVdc
—
1.0
Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1997