BAS21LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 318 08, STYLE 8 SOT 23 (TO 236AB)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAS21LT1/D
High Voltage Switching Diode
3
CATHODE
1
ANODE
BAS21LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BAS21LT1 = JS
Symbol
VR
IF
IFM(surge)
Value
250
200
625
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
IR
V(BR)
VF
CD
trr
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
Min
Max
Unit
µAdc
—
1.0
—
100
250
—
Vdc
mV
—
1000
—
1250
—
5.0
pF
—
50
ns
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1