BAS16WT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – CASE 419-02, STYLE 2 SC-70/SOT-323

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BAS16WT1/D
Silicon Switching Diode
3
CATHODE
1
ANODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 µs
VR
75
IR
200
IFM(surge)
500
Total Power Dissipation, One Diode Loaded
PD
200
TA = 25°C
Derate above 25°C
1.6
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
R_θJA
0.625
DEVICE MARKING
A6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 Ω) (Figure 1)
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2)
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Unit
V
mA
mA
mW
mW/°C
°C
Unit
°C/mW
Symbol
VF
IR
CD
trr
QS
VFR
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
BAS16WT1
Motorola Preferred Device
3
1
2
CASE 419–02, STYLE 2
SC–70/SOT–323
Min
Max
Unit
mV
—
715
—
866
—
1000
—
1250
µA
—
1.0
—
50
—
30
—
2.0
pF
—
6.0
ns
—
45
PC
—
1.75
V
1