BAS16LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 31808, STYLE 8 SOT23 (TO236AB)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAS16LT1/D
Switching Diode
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BAS16LT1 = A6
3
CATHODE
Symbol
VR
IF
IFM(surge)
Value
75
200
500
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
1
ANODE
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 Ω)
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω)
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Symbol
IR
V(BR)
VF
CD
VFR
trr
QS
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
BAS16LT1
Motorola Preferred Device
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
Min
Max
Unit
µAdc
—
1.0
—
50
—
30
75
—
Vdc
mV
—
715
—
855
—
1000
—
1250
—
2.0
pF
—
1.75
Vdc
—
6.0
ns
—
45
pC
1