2N7000 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 29-04, STYLE 22 TO-92 (TO-226AA)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N7000/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN
2N7000
Motorola Preferred Device
2
GATE
MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
Value
60
60
± 20
± 40
200
500
350
2.8
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
TJ, Tstg
– 55 to +150
Symbol
Max
R_θJA
357
TL
300
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current, Forward
(VGSF = 15 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
1 SOURCE
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
mW
mW/°C
°C
Unit
°C/W
°C
Symbol
V(BR)DSS
IDSS
IGSSF
VGS(th)
rDS(on)
VDS(on)
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
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CASE 29–04, STYLE 22
TO–92 (TO–226AA)
Min
Max
Unit
60
—
Vdc
—
1.0
µAdc
—
1.0
mAdc
—
–10
nAdc
0.8
3.0
Vdc
Ohm
—
5.0
—
6.0
Vdc
—
2.5
—
0.45
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