2N6576_1 Datasheet, PDF (1/4 Pages) Motorola, Inc – NPN Silicon Power Darlington Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon Power Darlington
Transistors
General–purpose EpiBase power Darlington transistors, suitable for linear and
switching applications.
• Replacement for 2N3055 and Driver
• High Gain Darlington Performance
• Built–in Diode Protection for Reverse Polarity Protection
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ • Can Be Driven from Low–Level Logic
• Popular Voltage Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{• Operating Range — –65 to +200_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol 2N6576 2N6577 2N6578 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{— Peak}
VCEO(sus) 60
VCB
60
VEB
IC
90
120
Vdc
90
120
Vdc
7.0
Vdc
15
Adc
30
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current — Continuous}
IB
— Peak
0.25
Adc
0.50
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{EmitterCurrent— Continuous}
IE
— Peak
15.25
Adc
30.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{@ TC = 25_C}
Derate above 25_C
PD
120
Watts
0.685
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
TJ, Tstg
– 65 to + 200
_C
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum Lead Temperature for Soldering}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Purposes: 1/16″ from Case for 10s.}
Symbol
R_θJC
TL
Max
Unit
1.46
_C/W
265
_C
(1) Indicates JEDEC Registered Data.
DARLINGTON SCHEMATIC
COLLECTOR
Order this document
by 2N6576/D
2N6576
2N6577
2N6578
15 AMPERE
POWER TRANSISTORS
NPN SILICON
DARLINGTON
60, 90, 120 VOLTS
120 WATTS
CASE 1–07
TO–204AA
(TO–3)
BASE
[ [ 4 k
50
EMITTER
REV 7
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
1