2N6576 Datasheet, PDF (1/4 Pages) General Semiconductor – 15 AMPERE NPN DARLINGTON POWER TRAN

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NPN SILICON POWER DARLINGTON TRANSISTORS
General-purpose EpiBase power darl ington transistors, suitable
for linear and switching applications.
Replacement for 2N3055 and Driver
High Gain Darlington Performance
Built-In Diode Protection for Reverse Polarity Protection
Can Be Driven from Low-Level Logic
Popular Voltage Range
Operating Range – -65 to t200°C
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2H6576
2H6577
2N6578
Total Power Dissipation @ Tc = 25°C
Derate above 25°C
Operating and Storage Junction~,+.,~~!{i‘3,.*,<:,*! ^{> TJ ,T~tg}
Temperature Range
‘~:p, .! ,y,
THERMAL
CHARAC,@~lS*~CS
Character&~T:\l>&U~...s. $s”
Symbol
Thermal flesistang~+~~~$ion to Case
R~JC
Maximum Lea@T~~&ature
for Soldering
TL
Purposq#N4 j$~’ }rom Case for 10s.
,
—120—
A
~-65
0.685 —
to t200 ~
Max
1.46
265
Watts
Wloc
Oc ‘
4
Unit
Oclw
‘c
~&_; ^{LFA’~l*c}
!
SEATING
Y
PLANE
STYLEi:
PIN 1. BASE
F
2. EMITTER
J
CASE:COLLECTOR
Q
H
BT
‘~~>
MILLIMETERSI INCHES
DIM MIN _{I MAX I MIN MAX}
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DAR LINGTON SCHEMATIC
~-----
Collector
1
Base
‘4’ d! it
Lz4
=150’ ~
k__
J
Emitter
,...,,,,
Epi Base is a Trademerk of Motorole Inc.
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CASE 11-03
TO-3
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~MOTOROLAINC., 197a
u^--> 6^--J^-D^-3
(Replaces AD I 327)