2N6071 Datasheet, PDF (1/6 Pages) Motorola, Inc – TRIACs 4 AMPERES RMS 200 thru 600 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL,
CMOS and Operational Amplifier Integrated Circuit Logic Functions
• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Order this document
by 2N6071/D
2N6071A,B*
2N6073A,B*
2N6075A,B*
*Motorola preferred devices
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
MT1
MT2
G
MT2
G
MT2 _MT1
CASE 77-08
(TO-225AA)
STYLE 5
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
*Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = 25 to 110°C)
2N6071A,B
2N6073A,B
2N6075A,B
Symbol
VDRM
Value
200
400
600
Unit
Volts
*On-State Current RMS (TC = 85°C)
*Peak Surge Current
(One Full cycle, 60 Hz, TJ = –40 to +110°C)
Circuit Fusing Considerations
(t = 8.3 ms)
IT(RMS)
4
ITSM
30
I2t
3.7
Amps
Amps
A2s
*Peak Gate Power
PGM
10
Watts
*Average Gate Power
PG(AV)
0.5
Watt
*Peak Gate Voltage
VGM
5
Volts
*Indicates JEDEC Registered Data.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
1
© Motorola, Inc. 1998